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Analog-designs Questions Set 45:

Quiz Mode

If the emitter resistor is open, the collector voltage will be:

Low

High

Unchanged

Unknown

Solution:

On which substrate is Silicon-On-Sapphire (SOS) MOS structure grown?

MOST

MOSFET

JFET

Sapphire

Solution:

At absolute zero temperature, semiconductors behave as ______.

Conductors

Insulators

Pure semiconductors

Intrinsic semiconductors

Solution:

Transiator can be operated as switch in

Active and cut off region

Saturation and cut off region

Active and saturation region

Active region

Solution:

Which of the following oscillators is not a sinusoidal oscillator?

LC Oscillator

RC Phase shift oscillator

Relaxation Oscillator

Crystal oscillator

Solution:

An RC phase shift oscillator has R₁ = R₂ = R₃ = R = 10kΩ and C₁ = C₂ = C₃ = C = 0.047μF. Determine the frequency of the oscillation.

234.62 Hz

7.34 Hz

338.58 Hz

138.3 Hz

Solution:

For an n-channel enhancement-type MOSFET, if the source is at a higher potential than the bulk, the threshold voltage V_T of the MOSFET will:

become zero

increase

decrease

remain unchanged

Solution:

Three identical amplifiers, each with a voltage gain of 50, input resistance of 1 kΩ, and output resistance of 250 Ω, are cascaded. The open-circuit voltage gain of the combined amplifier is:

49 dB

51 dB

98 dB

102 dB

Solution:

For a MOSFET, the pinch-off voltage is -2.5 V. The gate-to-source voltage is 18 V. The aspect ratio (W/L) is 3. The process transconductance parameter is 50 μA/V². Find the drain-to-source current in saturation.

0.03 A

0.05 A

0.01 A

0.5 mA

Solution:

What is the descending order of the Transformer Utilization Factor (TUF) for the rectifier types?

Note: BR stands for Bridge Rectifier, FWR stands for Full Wave Rectifier, and HWR stands for Half-wave Rectifier.

BR > FWR > HWR

HWR > FWR > BR

FWR > HWR > BR

BR > HWR > FWR

Analog-designs Questions Set 45:

If the emitter resistor is open, the collector voltage will be:

Solution:

On which substrate is Silicon-On-Sapphire (SOS) MOS structure grown?

Solution:

At absolute zero temperature, semiconductors behave as ______.

Solution:

Transiator can be operated as switch in

Solution:

Which of the following oscillators is not a sinusoidal oscillator?

Solution:

An RC phase shift oscillator has R₁ = R₂ = R₃ = R = 10kΩ and C₁ = C₂ = C₃ = C = 0.047μF. Determine the frequency of the oscillation.

Solution:

For an n-channel enhancement-type MOSFET, if the source is at a higher potential than the bulk, the threshold voltage V_T of the MOSFET will:

Solution:

Three identical amplifiers, each with a voltage gain of 50, input resistance of 1 kΩ, and output resistance of 250 Ω, are cascaded. The open-circuit voltage gain of the combined amplifier is:

Solution:

For a MOSFET, the pinch-off voltage is -2.5 V. The gate-to-source voltage is 18 V. The aspect ratio (W/L) is 3. The process transconductance parameter is 50 μA/V². Find the drain-to-source current in saturation.

Solution:

What is the descending order of the Transformer Utilization Factor (TUF) for the rectifier types?

Note: BR stands for Bridge Rectifier, FWR stands for Full Wave Rectifier, and HWR stands for Half-wave Rectifier.

Solution:

Related Question Sets:

Related Topics:

Analog-designs Questions Set 45:

If the emitter resistor is open, the collector voltage will be:

Solution:

On which substrate is Silicon-On-Sapphire (SOS) MOS structure grown?

Solution:

At absolute zero temperature, semiconductors behave as ______.

Solution:

Transiator can be operated as switch in

Solution:

Which of the following oscillators is not a sinusoidal oscillator?

Solution:

An RC phase shift oscillator has R₁ = R₂ = R₃ = R = 10kΩ and C₁ = C₂ = C₃ = C = 0.047μF. Determine the frequency of the oscillation.

Solution:

For an n-channel enhancement-type MOSFET, if the source is at a higher potential than the bulk, the threshold voltage VT of the MOSFET will:

Solution:

Three identical amplifiers, each with a voltage gain of 50, input resistance of 1 kΩ, and output resistance of 250 Ω, are cascaded. The open-circuit voltage gain of the combined amplifier is:

Solution:

For a MOSFET, the pinch-off voltage is -2.5 V. The gate-to-source voltage is 18 V. The aspect ratio (W/L) is 3. The process transconductance parameter is 50 μA/V2. Find the drain-to-source current in saturation.

Solution:

What is the descending order of the Transformer Utilization Factor (TUF) for the rectifier types? Note: BR stands for Bridge Rectifier, FWR stands for Full Wave Rectifier, and HWR stands for Half-wave Rectifier.

Solution:

Related Question Sets:

Related Topics:

For an n-channel enhancement-type MOSFET, if the source is at a higher potential than the bulk, the threshold voltage V_T of the MOSFET will:

For a MOSFET, the pinch-off voltage is -2.5 V. The gate-to-source voltage is 18 V. The aspect ratio (W/L) is 3. The process transconductance parameter is 50 μA/V². Find the drain-to-source current in saturation.

What is the descending order of the Transformer Utilization Factor (TUF) for the rectifier types?

Note: BR stands for Bridge Rectifier, FWR stands for Full Wave Rectifier, and HWR stands for Half-wave Rectifier.