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Analog-designs Questions Set 11:

Quiz Mode

The band-gap of silicon at room temperature is

1.3 eV

0.7 eV

1.1 eV

1.4 eV

Solution:

The shift registers in which the result of addition and the carry operation are stored are:

A and C

B and F

B and C

A and PWS

Solution:

D-MOSFET cannot be biased using which technique?

Feedback Biasing

Fixed Biasing

Self Biasing / Zero Biasing

Voltage Divider Biasing

Solution:

For an inverting Schmitt trigger with feedback factor 0.4, Calculate the hysteresis width(in Volts). Assume the supply voltage to be 10V.

Solution:

A MOS capacitor has an oxide thickness (t_ox) of 50 nm. The capacitance per unit area (C'_ox) is ____ nF/cm².

101 nF/cm^2

6.9 nF/cm^2

84 nF/cm^2

Solution:

What is the primary purpose of the follower stage in a MOS amplifier with CD configuration?

To act as a switch

To act as a current source

To act as a buffer stage

To act as an amplifier

Solution:

An RC coupled amplifier with a bypass capacitor removed acts as a negative feedback amplifier with which of the following topologies?

Series-Series

Series-Shunt

Shunt-Series

Shunt-Shunt

Solution:

Calculate the average and RMS values of the output voltage when a half-wave diode circuit using an ideal diode has an input voltage of 12.5 sin ωt V.

1.98 V, 6.25 V

3.98 V, 8.84 V

1.98 V, 8.84 V

3.98 V, 8.84 V

Solution:

Kirchhoff's laws, known as Kirchhoff's Current Law (KCL) and Kirchhoff's Voltage Law (KVL), are based respectively on the:

conservation of energy only

conservation of energy and conservation of charge

conservation of charge and conservation of energy

conservation of charge only

Solution:

The drift velocity of electrons in silicon

is proportional to the electric field for all values of electric field

is independent of electric field

increases at low values of electric field and decreases as high values of electric field exhibiting negative differential resistance

increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field exhibiting negative differential resistance

Analog-designs Questions Set 11:

The band-gap of silicon at room temperature is

Solution:

The shift registers in which the result of addition and the carry operation are stored are:

Solution:

D-MOSFET cannot be biased using which technique?

Solution:

For an inverting Schmitt trigger with feedback factor 0.4, Calculate the hysteresis width(in Volts). Assume the supply voltage to be 10V.

Solution:

A MOS capacitor has an oxide thickness (t_ox) of 50 nm. The capacitance per unit area (C'_ox) is ____ nF/cm².

Solution:

What is the primary purpose of the follower stage in a MOS amplifier with CD configuration?

Solution:

An RC coupled amplifier with a bypass capacitor removed acts as a negative feedback amplifier with which of the following topologies?

Solution:

Calculate the average and RMS values of the output voltage when a half-wave diode circuit using an ideal diode has an input voltage of 12.5 sin ωt V.

Solution:

Kirchhoff's laws, known as Kirchhoff's Current Law (KCL) and Kirchhoff's Voltage Law (KVL), are based respectively on the:

Solution:

The drift velocity of electrons in silicon

Solution:

Related Question Sets:

Related Topics:

Analog-designs Questions Set 11:

The band-gap of silicon at room temperature is

Solution:

The shift registers in which the result of addition and the carry operation are stored are:

Solution:

D-MOSFET cannot be biased using which technique?

Solution:

For an inverting Schmitt trigger with feedback factor 0.4, Calculate the hysteresis width(in Volts). Assume the supply voltage to be 10V.

Solution:

A MOS capacitor has an oxide thickness (tox) of 50 nm. The capacitance per unit area (C'ox) is ____ nF/cm2.

Solution:

What is the primary purpose of the follower stage in a MOS amplifier with CD configuration?

Solution:

An RC coupled amplifier with a bypass capacitor removed acts as a negative feedback amplifier with which of the following topologies?

Solution:

Calculate the average and RMS values of the output voltage when a half-wave diode circuit using an ideal diode has an input voltage of 12.5 sin ωt V.

Solution:

Kirchhoff's laws, known as Kirchhoff's Current Law (KCL) and Kirchhoff's Voltage Law (KVL), are based respectively on the:

Solution:

The drift velocity of electrons in silicon

Solution:

Related Question Sets:

Related Topics:

A MOS capacitor has an oxide thickness (t_ox) of 50 nm. The capacitance per unit area (C'_ox) is ____ nF/cm².