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Analog-designs Questions Set 15:

Quiz Mode

The bandgap of Silicon at 27°C is:

1.21 eV

1.1 eV

1 eV

1.3 eV

Solution:

A p-n junction acts as a

Controlled Switch

Bidirectional Switch

Unidirectional Switch

None of the above

Solution:

If the peak value of a sinusoidal waveform is 240 V, find its effective (RMS) value.

38.19 V

169.70 V

339.41 V

239.03 V

Solution:

The information is an analog waveform with maximum frequency component 3 kHz is to be transmitted over a 16 level PCM system. The transmission band width is

Solution:

For identical construction, which type of bipolar junction transistor (BJT) has faster switching times?

npn

pnp

None of the above

Both npn and pnp have equal switching speed

Solution:

In a Hartley oscillator, the values of L2 and C are 0.4 mH and 0.004 μF, respectively. If the frequency of the oscillator is 120 kHz, find the value of L1.

0.4 mH

0.04 mH

0.004 mH

400 mH

Solution:

While biasing a JFET, if the drain and source terminals are interchanged, then

the device will work normally

the device will get damaged

the device will work but the value of the drain current (ID) will be affected

Solution:

The reverse recovery time of a diode is t_rr = 3 microseconds and the rate of fall of the diode current is di/dt = 30 A/microseconds. Determine the storage charge Q_RR.

90 microseconds

67.5 microseconds

135 microseconds

180 microseconds

Solution:

If a non-ideal silicon diode has anode terminal voltage as 3.3V and cathode terminal voltage as 4.0V, then the diode is

Forward biased with a positive voltage drop across it.

Reverse biased

Forward biased with zero voltage drop across it.

diode is in breakdown region.

Solution:

A silicon wafer has 100 nm of oxide on it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate

is independent of current oxide thickness and temperature

is independent of current oxide thickness but depends on temperature

slows down as the oxide grows

is zero as the existing oxide prevents further oxidation

Analog-designs Questions Set 15:

The bandgap of Silicon at 27°C is:

Solution:

A p-n junction acts as a

Solution:

If the peak value of a sinusoidal waveform is 240 V, find its effective (RMS) value.

Solution:

The information is an analog waveform with maximum frequency component 3 kHz is to be transmitted over a 16 level PCM system. The transmission band width is

Solution:

For identical construction, which type of bipolar junction transistor (BJT) has faster switching times?

Solution:

In a Hartley oscillator, the values of L2 and C are 0.4 mH and 0.004 μF, respectively. If the frequency of the oscillator is 120 kHz, find the value of L1.

Solution:

While biasing a JFET, if the drain and source terminals are interchanged, then

Solution:

The reverse recovery time of a diode is t_rr = 3 microseconds and the rate of fall of the diode current is di/dt = 30 A/microseconds. Determine the storage charge Q_RR.

Solution:

If a non-ideal silicon diode has anode terminal voltage as 3.3V and cathode terminal voltage as 4.0V, then the diode is

Solution:

A silicon wafer has 100 nm of oxide on it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate

Solution:

Related Question Sets:

Related Topics:

Analog-designs Questions Set 15:

The bandgap of Silicon at 27°C is:

Solution:

A p-n junction acts as a

Solution:

If the peak value of a sinusoidal waveform is 240 V, find its effective (RMS) value.

Solution:

The information is an analog waveform with maximum frequency component 3 kHz is to be transmitted over a 16 level PCM system. The transmission band width is

Solution:

For identical construction, which type of bipolar junction transistor (BJT) has faster switching times?

Solution:

In a Hartley oscillator, the values of L2 and C are 0.4 mH and 0.004 μF, respectively. If the frequency of the oscillator is 120 kHz, find the value of L1.

Solution:

While biasing a JFET, if the drain and source terminals are interchanged, then

Solution:

The reverse recovery time of a diode is trr = 3 microseconds and the rate of fall of the diode current is di/dt = 30 A/microseconds. Determine the storage charge QRR.

Solution:

If a non-ideal silicon diode has anode terminal voltage as 3.3V and cathode terminal voltage as 4.0V, then the diode is

Solution:

A silicon wafer has 100 nm of oxide on it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate

Solution:

Related Question Sets:

Related Topics:

The reverse recovery time of a diode is t_rr = 3 microseconds and the rate of fall of the diode current is di/dt = 30 A/microseconds. Determine the storage charge Q_RR.