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DRAM Pathfinding & Process Integration Engineer

Micron Technology
NewPosted yesterday

LOCATION

New York · Remote

EXPERIENCE

5+ Years

TYPE

FullTime

SALARY

$159K - $271K /year

SKILLS REQUIRED

Process IntegrationSemiconductor Device PhysicsDesign of ExperimentsMemory Technology

Job description

Overview

Lead early-stage pathfinding and process integration for next-generation DRAM architectures, translating structural, electrical, reliability and manufacturability requirements into integrated process solutions before concepts move into formal development programs.

What you'll do

  • Lead pathfinding investigations of next-generation DRAM concepts, materials, process architectures and advanced patterning solutions, including High-NA EUV.
  • Develop and integrate process flows across lithography, dry etch, thin films, CMP, metrology, device engineering and manufacturing, balancing performance, yield, reliability, manufacturability and cost.
  • Design and implement DOE and technology-learning experiments, using statistical and AI-assisted analytics to evaluate electrical, defectivity, metrology, reliability and yield data.
  • Collaborate with NY CREATES, equipment suppliers, research partners and Micron teams to evaluate emerging capabilities and influence technology priorities while protecting Micron intellectual property.
  • Support the transition of successful pathfinding concepts into technology development and production by documenting key learning, technical assumptions, risks and recommendations.

What you'll need

  • Master's degree or equivalent experience in Electrical Engineering, Physics, Materials Science, Chemical Engineering or a related technical field.
  • 5+ years of semiconductor industry experience in process integration, process development, device engineering or advanced R&D.
  • Strong understanding of memory technologies, semiconductor device physics and process integration.
  • Experience with DOE methodologies, statistical analysis and technical problem-solving.
  • Demonstrated ability to influence and collaborate across multidisciplinary engineering teams.

Nice to have

  • Ph.D. or equivalent experience in Electrical Engineering, Physics, Materials Science or a related field.
  • Experience with DRAM technology development, advanced memory scaling, EUV or High-NA EUV lithography, technology scouting or advanced process integration.
  • Experience working with semiconductor consortia, equipment suppliers, research institutions or other external technology partners.
  • Familiarity with Python, JMP, SQL, machine learning and advanced analytics tools.
  • Experience using AI-assisted analytics to enhance data interpretation, anomaly detection and yield improvement initiatives.

Details

  • Full-time position; US base salary range $159,000.00 - $271,000.00 a year, base pay only.
  • Location: New York, remote.

Read the full description and apply on the company’s own careers page.

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DRAM Pathfinding & Process Integration Engineer